FDS86267P Series

P-Channel Shielded Gate PowerTrench® MOSFET -150V, -2.2A, 255mΩ

Catalog

P-Channel Shielded Gate PowerTrench® MOSFET -150V, -2.2A, 255mΩ

Part	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDS86267P	1 W	Surface Mount	2.2 A	8-SOIC	3.9 mm	0.154 in	8-SOIC	4 V	1130 pF	255 mOhm	P-Channel	16 nC	6 V 10 V	MOSFET (Metal Oxide)	25 V	150 V	-55 °C	150 °C

Catalog

P-Channel Shielded Gate PowerTrench® MOSFET -150V, -2.2A, 255mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 255 mΩ at VGS= -10 V, ID= -2.2 A

• Max rDS(on)= 290 mΩ at VGS= -6 V, ID= -2 A

• Very Low rDS(on)Mid Voltage P-channel Silicon Technology Optimised for Low Qg

• This Product is Optimised for Fast Switching Applications as well as Load Switch Applications

• 100% UIL Tested

• RoHS Compliant

Description

This P-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates shielded gate technology. The process has been optimized for the on-state resistance and yet maintain superior switching performance.