FDS8672S Series

N-Channel PowerTrench® SyncFET™ 30V, 18A, 4.8mΩ

Catalog

N-Channel PowerTrench® SyncFET™ 30V, 18A, 4.8mΩ

Part	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDS8672S	Surface Mount	MOSFET (Metal Oxide)	2670 pF	4.8 mOhm	4.5 V 10 V	41 nC	8-SOIC	3 V	20 V	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	N-Channel	30 V	2.5 W	18 A
ON Semiconductor FDS8672S	Surface Mount	MOSFET (Metal Oxide)	2670 pF	4.8 mOhm	4.5 V 10 V	41 nC	8-SOIC	3 V	20 V	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	N-Channel	30 V	2.5 W	18 A

Catalog

N-Channel PowerTrench® SyncFET™ 30V, 18A, 4.8mΩ

Key Features

• Max rDS(on)= 4.8mΩ at VGS= 10V, ID= 18A

• Max rDS(on)= 7.0mΩ at VGS= 4.5V, ID= 15A

• Includes SyncFET Schottky body diode

• High performance trench technology for extremely low rDS(on)and fast switching

• High power and current handling capability

• 100% Rg(Gate Resistance) tested

• Termination is Lead-free and RoHS Compliant

Description

The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on)and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using a monolithic SyncFET technology.