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ON Semiconductor

Series List(12147)

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Series	Category	# Parts	Status	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

FDS6570ASingle N-Channel 2.5V Specified PowerTrench<sup>®</sup> MOSFET 20V, 15A, 7.5mΩ	Discrete Semiconductor Products	1	Obsolete	This N-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6575P-Channel 2.5V Specified PowerTrench<sup>®</sup> MOSFET -20V, -10A, 13mΩ	FETs, MOSFETs	1	LTB	This P-Channel 2.5V specified MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V).
FDS6612ASingle N-Channel, Logic Level, Power Trench<sup>®</sup> MOSFET 30V, 8.4A, 22mΩ	Single FETs, MOSFETs	2	Active	This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6670ASingle N-Channel Logic Level PowerTrench<sup>®</sup> MOSFET 30V, 13A, 8mΩ	Single FETs, MOSFETs	2	Active	This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6676ASN-Channel Logic Level PowerTrench<sup>TM</sup> MOSFET 30V, 6.5A 38mΩ	Single	21	Active	This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
FDS6680ASN-Channel PowerTrench<sup>®</sup> SyncFET™, 30V, 11.5A, 10.0mΩ	FETs, MOSFETs	1	Obsolete	The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge. The FDS6680AS includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.
FDS6681Z30V P-Channel PowerTrench<sup>®</sup> MOSFET -20A, 4.6mΩ	Transistors	1	Active	This P-channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
FDS6685P-Channel PowerTrench<sup>®</sup> MOSFET -30V, -8.8A, 20mΩ	Single	1	Obsolete	This P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
FDS6690ASingle N-Channel, Logic Level, Power Trench<sup>®</sup> MOSFET 30V, 11A, 12.5mΩ	Discrete Semiconductor Products	3	Active	This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6690AS30V N-Channel PowerTrench<sup>®</sup> SyncFET™ 10A, 12mΩ	Discrete Semiconductor Products	1	Obsolete	The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge. The FDS6690AS includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.