FDS8858CZ Series

Dual N & P-Channel PowerTrench® MOSFET 30V

Catalog

Dual N & P-Channel PowerTrench® MOSFET 30V

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Feature	Power - Max [Max]	Technology	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDS8858CZ	8-SOIC	3 V	30 V	17 mOhm	Logic Level Gate	900 mW	MOSFET (Metal Oxide)	7.3 A	8.6 A	N and P-Channel	-55 °C	150 °C	1205 pF	8-SOIC	3.9 mm	0.154 in	Surface Mount	24 nC

Catalog

Dual N & P-Channel PowerTrench® MOSFET 30V

Key Features

• Q1 N-ChannelMax. RDS(on)= 17 mΩ at VGS= 10 V, ID= 8.6 AMax. RDS(on)= 20 mΩ at VGS= 4.5 V, ID= 7.3 A

• Q2 P-ChannelMax. RDS(on)= 20.5 mΩ at VGS= -10 V, ID= -7.3 AMax. RDS(on)= 34.5 mΩ at VGS= -4.5 V, ID= -5.6 A

• High Power and Current Handling Capability in a Widely Used Surface Mount Package

• Fast Switching Speed

Description

These dual N and P-Channel enhancement mode power MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.