FDS6690A Series

Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 11A, 12.5mΩ

Catalog

Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 11A, 12.5mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDS6690A	1205 pF	Surface Mount	-55 °C	150 °C	11 A	8-SOIC	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	3 V	N-Channel	20 V	2.5 W	30 V	12.5 mOhm
ON Semiconductor FDS6690A-NBNP006	1205 pF	Surface Mount	-55 °C	150 °C	11 A	8-SOIC	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	3 V	N-Channel	20 V	1 W	30 V	12.5 mOhm
ON Semiconductor FDS6690AS	910 pF	Surface Mount	-55 °C	150 °C	10 A	8-SOIC	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	3 V	N-Channel	20 V	2.5 W	30 V	12 mOhm	23 nC

Catalog

Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 11A, 12.5mΩ

Key Features

• 11 A, 30 V

• RDS(ON)= 12.5 mΩ @ VGS= 10 V

• RDS(ON)= 17.0 mΩ @ VGS= 4.5 V

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Description

This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.