FDS6690AS Series

30V N-Channel PowerTrench® SyncFET™ 10A, 12mΩ

Catalog

30V N-Channel PowerTrench® SyncFET™ 10A, 12mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDS6690AS	-55 °C	150 °C	30 V	10 A	8-SOIC	23 nC	12 mOhm	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	2.5 W	3 V	N-Channel	Surface Mount	8-SOIC	3.9 mm	0.154 in	910 pF

Catalog

30V N-Channel PowerTrench® SyncFET™ 10A, 12mΩ

Key Features

• 10A, 30V

• RDS(ON)= 12 mΩ @ VGS= 10V

• RDS(ON)= 15 mΩ @ VGS= 4.5V

• Includes SyncFET Schottky diode

• Low gate charge (16nC typical)

• High performance trench technology for extremely lowRDS(ON)

• High power and current handling capability

Description

The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge. The FDS6690AS includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.