FDS6570A Series

Single N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 15A, 7.5mΩ

Catalog

Single N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 15A, 7.5mΩ

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor FDS6570A	8-SOIC	1.5 V	Surface Mount	4700 pF	20 V	-55 °C	150 °C	15 A	2.5 V 4.5 V	N-Channel	8 V	MOSFET (Metal Oxide)	2.5 W	66 nC	7.5 mOhm	8-SOIC	3.9 mm	0.154 in

Catalog

Single N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 15A, 7.5mΩ

Key Features

• 15 A, 20 VRDS(on)= 0.0075 Ω @ VGS= 4.5 VRDS(on)= 0.010 Ω @ VGS= 2.5 V

• Low gate charge ( 47nC typical )

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Description

This N-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.