FDS6575 Series

P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -10A, 13mΩ

Catalog

P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -10A, 13mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDS6575	10 A	13 mOhm	2.5 W	4951 pF	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	Surface Mount	P-Channel	-55 °C	175 ░C	8 V	2.5 V 4.5 V	1.5 V	8-SOIC	20 V	74 nC

Catalog

P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -10A, 13mΩ

Key Features

-10 A, -20 V

• RDS(ON)= 13 mΩ @ VGS= -4.5 V

• RDS(ON)= 17 mΩ @ VGS= -2.5 V

• Low gate charge

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V).