FDS6670A Series

Single N-Channel Logic Level PowerTrench® MOSFET 30V, 13A, 8mΩ

Catalog

Single N-Channel Logic Level PowerTrench® MOSFET 30V, 13A, 8mΩ

Part	Power Dissipation (Max)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
ON Semiconductor FDS6670A	2.5 W	MOSFET (Metal Oxide)	20 V	2220 pF	N-Channel	8 mOhm	Surface Mount	30 nC	-55 °C	150 °C	4.5 V 10 V	13 A	8-SOIC	3.9 mm	0.154 in	8-SOIC	3 V	30 V
ON Semiconductor FDS6670A	2.5 W	MOSFET (Metal Oxide)	20 V	2220 pF	N-Channel	8 mOhm	Surface Mount	30 nC	-55 °C	150 °C	4.5 V 10 V	13 A	8-SOIC	3.9 mm	0.154 in	8-SOIC	3 V	30 V

Catalog

Single N-Channel Logic Level PowerTrench® MOSFET 30V, 13A, 8mΩ

Key Features

• 13 A, 30 V

• RDS(ON)= 8 mΩ @ VGS= 10 V

• RDS(ON)= 10 mΩ @ VGS= 4.5 V

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Description

This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.