FDS6685 Series

P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ

Catalog

P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id
ON Semiconductor FDS6685-NBCM003A	1604 pF	30 V	Surface Mount	20 mOhm	8-SOIC	25 V	P-Channel	8.8 A	4.5 V 10 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	24 nC	1 W	8-SOIC	3.9 mm	0.154 in	3 V

Catalog

P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ

Key Features

• –8.8 A, –30 VRDS(ON)= 20 mΩ @ VGS= –10 VRDS(ON)= 35 mΩ @ VGS= –4.5 V

• Low gate charge (17nC typical)

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Description

This P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).