FDS6612A Series

Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 8.4A, 22mΩ

Catalog

Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 8.4A, 22mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor FDS6612A-NB5E029A	560 pF	MOSFET (Metal Oxide)	20 V	N-Channel	4.5 V 10 V	30 V	1 W	7.6 nC	-55 °C	150 °C	8.4 A	22 mOhm	Surface Mount	3 V	8-SOIC	8-SOIC	3.9 mm	0.154 in
ON Semiconductor FDS6612A	560 pF	MOSFET (Metal Oxide)	20 V	N-Channel	4.5 V 10 V	30 V	2.5 W	7.6 nC	-55 °C	150 °C	8.4 A	22 mOhm	Surface Mount	3 V	8-SOIC	8-SOIC	3.9 mm	0.154 in

Catalog

Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 8.4A, 22mΩ

Key Features

• 8.4 A, 30 V

• RDS(ON)= 22 mΩ @ VGS= 10 V

• RDS(ON)= 30 mΩ @ VGS= 4.5 V

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Description

This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.