FDS6681Z Series

30V P-Channel PowerTrench® MOSFET -20A, 4.6mΩ

Catalog

30V P-Channel PowerTrench® MOSFET -20A, 4.6mΩ

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Vgs(th) (Max) @ Id
ON Semiconductor FDS6681Z	4.6 mOhm	Surface Mount	30 V	20 A	4.5 V 10 V	2.5 W	P-Channel	MOSFET (Metal Oxide)	260 nC	8-SOIC	-55 °C	150 °C	7540 pF	8-SOIC	3.9 mm	0.154 in	25 V	3 V

Catalog

30V P-Channel PowerTrench® MOSFET -20A, 4.6mΩ

Key Features

-20 A, -30V

• RDS(ON)= 4.6 mΩ @ VGS= -10V

• RDS(ON)= 6.5 mΩ @ VGS= -4.5V

• Extended VGSSrange (–25V) for battery applications

• HBM ESD protection level of 8kV typical (note 3)

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

• Termination is Lead-free and RoHS Compliant

Description

This P-channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.