FDS6680AS Series

N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ

Catalog

N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ

Part	Vgs (Max)	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDS6680AS	20 V	2.5 W	MOSFET (Metal Oxide)	10 mOhm	11.5 A	30 V	3 V	30 nC	8-SOIC	Surface Mount	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	4.5 V 10 V	N-Channel	1240 pF

Catalog

N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ

Key Features

• 11.5A, 30V

• RDS(ON)= 8.0 mΩ @ VGS= 10V

• RDS(ON)= 10.5 mΩ @ VGS= 4.5V

• Includes SyncFET Schottky body diode

• Low gate charge (22nC typical)

• High performance trench technology for extremely lowRDS(ON)and fast switching

• High power and current handling capability

Description

The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge. The FDS6680AS includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.