FDN028N20 Series

N-Channel PowerTrench® MOSFET 20V, 6.1A, 28mΩ

Catalog

N-Channel PowerTrench® MOSFET 20V, 6.1A, 28mΩ

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Technology	Vgs (Max)	FET Type	Package / Case	Vgs(th) (Max) @ Id
ON Semiconductor FDN028N20	20 V	1.5 W	6.1 A	-55 °C	150 °C	28 mOhm	2.5 V 4.5 V	SOT-23-3	6 nC	600 pF	Surface Mount	MOSFET (Metal Oxide)	12 V	N-Channel	SC-59 SOT-23-3 TO-236-3	1.5 V

Catalog

N-Channel PowerTrench® MOSFET 20V, 6.1A, 28mΩ

Key Features

• Max rDS(on)= 28 mΩ at VGS= 4.5 V, ID= 5.2 A

• Max rDS(on)= 45 mΩ at VGS= 2.5 V, ID= 4.4 A

• High Performance Trench Technology for Extremely Low rDS(on)

• High Power and Current Handling Capability in a Widely Used Surface Mount Package

• Fast Switching Speed

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel PowerTrench MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.