FDMT800120DC Series

N-Channel Dual CoolTM 88 PowerTrench® MOSFET 120V, 128A, 4.2mΩ

Catalog

N-Channel Dual CoolTM 88 PowerTrench® MOSFET 120V, 128A, 4.2mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor FDMT800120DC	20 A 129 A	120 V	3.2 W 156 W	8-Dual Cool™88	8-PowerVDFN	-55 °C	150 °C	6 V 10 V	Surface Mount	N-Channel	MOSFET (Metal Oxide)	7850 pF	20 V	4 V	107 nC	4.14 mOhm

Catalog

N-Channel Dual CoolTM 88 PowerTrench® MOSFET 120V, 128A, 4.2mΩ

Key Features

• Max rDS(on)= 4.14 mΩ at VGS= 10 V, ID= 20 A

• Max rDS(on)= 6.0 mΩ at VGS= 6 V, ID= 16 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• Next generation enhanced body diode technology, engineered for soft recovery

• Low profile 8x8mm MLP packag

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual CoolTMpackage technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.