FDN302P Series

P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -2.4A, 55mΩ

Catalog

P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -2.4A, 55mΩ

Part	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDN302P	Surface Mount	P-Channel	1.5 V	55 mOhm	500 mW	2.5 V 4.5 V	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	SOT-23-3	882 pF	SC-59 SOT-23-3 TO-236-3	14 nC	12 V	2.4 A

Catalog

P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -2.4A, 55mΩ

Key Features

• –20 A, –2.4 V.

• RDS(ON)= 0.055Ω @ VGS = –4.5 V

• RDS(ON)= 0.080Ω @ VGS = –2.5 V

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• SuperSOT™ -3 provides low RDS(ON)and 30% higher power handling capability than SOT23 in the samefootprint

Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).