FDN359BNN-Channel Logic Level PowerTrench<sup>®</sup> MOSFET 30V, 2.7A, 46mΩ | Transistors | 1 | Active | This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. |
| Single | 2 | Obsolete | |
| Single FETs, MOSFETs | 1 | Obsolete | |
FDN5618P60V P-Channel PowerTrench<sup>®</sup> MOSFET -1.25A, 170mΩ | Transistors | 1 | Active | This 60V P-Channel MOSFET uses a high voltage PowerTrench process. It has been optimized for power management applications. |
FDN5630N-Channel PowerTrench<sup>®</sup> MOSFET 60V, 1.7A, 100mΩ | FETs, MOSFETs | 1 | Active | This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON)in a small SOT23 footprint. ON Semiconductor’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON)specifications. The result is higher overall efficiency with less board space. |
FDN8601N-Channel PowerTrench<sup>®</sup> MOSFET 100V, 2.7A, 109mΩ | Single FETs, MOSFETs | 1 | Active | This N-Channel MOSFET is produced using an advanced Power Trench®process that has been optimized for rDS(on), switching performance and ruggedness. |
FDN86265PP-Channel PowerTrench<sup>®</sup> MOSFET -150V, -0.8A, 1.2Ω | FETs, MOSFETs | 1 | Active | This P-Channel MOSFET is produced using an advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance. |
FDN86501LZN-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 60 V, 2.6 A, 116 mΩ | Discrete Semiconductor Products | 1 | Active | This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. |
FDP020N06BN-Channel PowerTrench<sup>®</sup> MOSFET 60V, 313A, 2mΩ | Single | 1 | Active | This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
FDP025N06N-Channel PowerTrench<sup>®</sup> MOSFET 60V, 265A, 2.5mΩ | Single FETs, MOSFETs | 1 | Active | This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |