FDMS9600S Series

Dual N-Channel PowerTrench® MOSFET 30V

Catalog

Dual N-Channel PowerTrench® MOSFET 30V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power - Max [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Configuration	Technology
ON Semiconductor FDMS9600S	-55 °C	150 °C	3 V	Logic Level Gate	1705 pF	13 nC	8-MLP (5x6) Power56	1 W	30 V	Surface Mount	8.5 mOhm	8-PowerWDFN	16 A	12 A	2 N-Channel (Dual)	MOSFET (Metal Oxide)

Catalog

Dual N-Channel PowerTrench® MOSFET 30V

Key Features

• Q1 N-ChannelMax. RDS(on)= 8.5 mΩ at VGS= 10 V, ID= 12 AMax. RDS(on)= 12.4 mΩ at VGS= 4.5 V, ID= 10 A

• Q2 N-ChannelMax. RDS(on)= 5.5 mΩ at VGS= 10 V, ID= 16 AMax. RDS(on)= 7.0 mΩ at VGS= 4.5 V, ID= 14 A

• Low QgHigh-Side MOSFET

• Low RDS(on)Low-Side MOSFET

• Thermally Efficient Dual Power 56 Package

• Pinout Optimized for Simple PCB Design

• RoHS Compliant

Description

This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss high-side MOSFET is complemented by a low conduction loss low-side SyncFET™.