Catalog
Dual N-Channel PowerTrench<sup>®</sup> MOSFET 30V
Key Features
• Q1 N-ChannelMax. RDS(on)= 21.5 mΩ at VGS= 10 V, ID= 7.5 AMax. RDS(on)= 29.5 mΩ at VGS= 4.5 V, ID= 6.5 A
• Q2 N-ChannelMax. RDS(on)= 13 mΩ at VGS= 10 V, ID= 10 AMax. RDS(on)= 17mΩ at VGS= 4.5 V, ID= 8.5 A
• Low QgHigh-Side MOSFET
• Low RDS(on)Low-Side MOSFET
• Thermally efficient dual Power 56 package
• Pinout optimized for simple PCB design
• RoHS Compliant
Description
AI
This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss high-side MOSFET is complemented by a low conduction loss low-side SyncFET™.