FDMT800100DC Series

N-Channel Dual Cool™ 88 PowerTrench® MOSFET 100V, 162A, 2.95mΩ

Catalog

N-Channel Dual Cool™ 88 PowerTrench® MOSFET 100V, 162A, 2.95mΩ

Part	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDMT800100DC	N-Channel	Surface Mount	7835 pF	3.2 W 156 W	4 V	8-PowerVDFN	-55 °C	150 °C	24 A 162 A	20 V	111 nC	MOSFET (Metal Oxide)	8-Dual Cool™88	100 V	2.95 mOhm	6 V 10 V

Catalog

N-Channel Dual Cool™ 88 PowerTrench® MOSFET 100V, 162A, 2.95mΩ

Key Features

• Max rDS(on)= 2.95 mΩ at VGS= 10 V, ID= 24 A

• Max rDS(on)= 4.46 mΩ at VGS= 6 V, ID= 19 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• Next generation enhanced body diode technology, engineered for soft recovery

• Low profile 8x8mm MLP package

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual CoolTMpackage technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.