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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

FDN304PZP-Channel 1.8V Specified PowerTrench<sup>®</sup> MOSFET -20V, -2.4A, 52mΩ	FETs, MOSFETs	1	Active	This P-Channel 1.8V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
FDN308	Transistors	1	Active
FDN327NN-Channel 1.8 V<sub>gs</sub> Specified PowerTrench<sup>®</sup> MOSFET 20V, 2A, 70mΩ	Transistors	1	Active	This 20V N-Channel MOSFET uses a high voltage PowerTrench process. It has been optimized for power management applications.
FDN335NN-Channel 2.5V Specified PowerTrench™ MOSFET 20V, 1.7A, 70mΩ	Discrete Semiconductor Products	1	Active	This N-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDN336	FETs, MOSFETs	1	Obsolete
FDN337NN-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65mΩ	Single	2	Active	SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
FDN339	Discrete Semiconductor Products	1	Obsolete
FDN340PSingle P-Channel Logic Level PowerTrench<sup>®</sup> MOSFET -20V, -2A, 70mΩ	FETs, MOSFETs	1	Active	This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
FDN352APSingle P-Channel PowerTrench<sup>®</sup> MOSFET -30V, -1.3A, 180mΩ	Discrete Semiconductor Products	1	Active	This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.
FDN358PSingle P-Channel Logic Level PowerTrench<sup>®</sup> MOSFET -30V, -1.5A, 125mΩ	Single FETs, MOSFETs	1	Active	This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance.These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.