FDMC8878 Series

N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ

Catalog

N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDMC8884-F126	685 pF	8-MLP (3.3x3.3)	2.5 V	8-PowerWDFN	14 nC	-55 °C	150 °C	9 A 15 A	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	2.3 W 18 W	30 V	Surface Mount	20 V	19 mOhm
ON Semiconductor FDMC8854	3405 pF	8-MLP (3.3x3.3)	3 V	8-PowerWDFN	57 nC	-55 °C	150 °C	15 A	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	2 W 41 W	30 V	Surface Mount	20 V	5.7 mOhm
ON Semiconductor FDMC8878_F126	1230 pF	8-MLP (3.3x3.3)	3 V	8-PowerWDFN		-55 °C	150 °C	9.6 A 16.5 A	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	2.1 W 31 W	30 V	Surface Mount	20 V		14 mOhm	26 nC
ON Semiconductor FDMC8854	3405 pF	8-MLP (3.3x3.3)	3 V	8-PowerWDFN	57 nC	-55 °C	150 °C	15 A	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	2 W 41 W	30 V	Surface Mount	20 V	5.7 mOhm
ON Semiconductor FDMC8878	1230 pF	8-MLP (3.3x3.3)	3 V	8-PowerWDFN		-55 °C	150 °C	9.6 A 16.5 A	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	2.1 W 31 W	30 V	Surface Mount	20 V		14 mOhm	26 nC
ON Semiconductor FDMC8884	685 pF	8-MLP (3.3x3.3)	2.5 V	8-PowerWDFN	14 nC	-55 °C	150 °C	9 A 15 A	N-Channel	MOSFET (Metal Oxide)	4.5 V 10 V	2.3 W 18 W	30 V	Surface Mount	20 V	19 mOhm

N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ

• Max rDS(on)= 14mΩ at VGS= 10V, ID= 9.6A

• Max rDS(on)= 17mΩ at VGS= 4.5V, ID= 8.7A

• Low Profile–1mm max in MLP 3.3X3.3

• RoHS compliant

This N-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications.