FDMC86160ET100 Series

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 43A, 14mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 43A, 14mΩ

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor FDMC86160ET100	MOSFET (Metal Oxide)	1290 pF	Surface Mount	100 V	N-Channel	4 V	14 mOhm	6 V 10 V	2.8 W 65 W	8-PowerWDFN	20 V	22 nC	-55 °C	175 ░C	Power33

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 43A, 14mΩ

Key Features

• Extended TJrating to 175°C

• Shielded Gate MOSFET Technology

• Max rDS(on)= 14 mΩ at VGS= 10 V, ID= 9 A

• Max rDS(on)= 23 mΩ at VGS= 6 V, ID= 7 A

• High performance technology for extremely low rDS(on)

• Termination is Lead-free and RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance. This device is well suited for applications where ultra low RDS(on)is required in small spaces such as High performance VRM, POL and orring functions.