FDMC8462 Series

N-Channel Power Trench® MOSFET 40V, 20A, 5.8mΩ

Catalog

N-Channel Power Trench® MOSFET 40V, 20A, 5.8mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDMC8462	14 A 20 A	40 V	Surface Mount	Power33	8-PowerTDFN	43 nC	-55 °C	150 °C	20 V	2 W 41 W	MOSFET (Metal Oxide)	5.8 mOhm	4.5 V 10 V	3 V	N-Channel	2660 pF

Catalog

N-Channel Power Trench® MOSFET 40V, 20A, 5.8mΩ

Key Features

• Max rDS(on)= 5.8mΩ at VGS= 10V, ID= 13.5A

• Max rDS(on)= 8.0mΩ at VGS= 4.5V, ID= 11.8A

• Low Profile - 1mm max in Power 33

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.