FDMC86520L Series

N-Channel Power Trench® MOSFET 60V, 22A, 7.9mΩ

Catalog

N-Channel Power Trench® MOSFET 60V, 22A, 7.9mΩ

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDMC86520L	8-PowerWDFN	4550 pF	N-Channel	3 V	Surface Mount	8-MLP (3.3x3.3)	MOSFET (Metal Oxide)	64 nC	-55 °C	150 °C	20 V	4.5 V 10 V	2.3 W 40 W	7.9 mOhm	60 V	13.5 A 22 A

Catalog

N-Channel Power Trench® MOSFET 60V, 22A, 7.9mΩ

Key Features

• Max rDS(on)= 7.9 mΩ at VGS= 10 V, ID= 13.5 A

• Max rDS(on)= 11.7 mΩ at VGS= 4.5 V, ID= 11.5 A

• Low Profile - 1 mm max in Power 33

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.