FDMC86116LZ Series

N-Channel Power Trench® MOSFET 100V, 7.5A, 103mΩ

Catalog

N-Channel Power Trench® MOSFET 100V, 7.5A, 103mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
ON Semiconductor FDMC86116LZ	-55 °C	150 °C	3.3 A 7.5 A	N-Channel	Surface Mount	4.5 V 10 V	2.2 V	8-PowerWDFN	103 mOhm	8-MLP (3.3x3.3)	2.3 W 19 W	100 V	MOSFET (Metal Oxide)	6 nC	310 pF	20 V

Catalog

N-Channel Power Trench® MOSFET 100V, 7.5A, 103mΩ

Key Features

• Maximum RDS(on)= 103 mΩ at VGS= 10 V, ID= 3.3 A

• Maximum RDS(on)= 153 mΩ at VGS= 4.5 V, ID= 2.7 A

• HBM ESD protection level >3 KV typical

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel logic Level MOSFETs are produced using an advanced Power Trench®process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S Zener has been added to enhance ESD voltage level.