FDMC86570L Series

N-Channel Shielded Gate PowerTrench® MOSFET 60V , 84A, 4.3mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 60V , 84A, 4.3mΩ

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type
ON Semiconductor FDMC86570L	Power33	6705 pF	4.3 mOhm	88 nC	18 A 56 A	60 V	-55 °C	150 °C	20 V	2.3 W 54 W	3 V	MOSFET (Metal Oxide)	8-PowerWDFN	4.5 V 10 V	Surface Mount	N-Channel

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 60V , 84A, 4.3mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 4.3 mΩ at VGS= 10 V, ID= 18 A

• Max rDS(on)= 6.5 mΩ at VGS= 4.5 V, ID= 15 A

• High performance technology for extremely low rDS(on)

• Termination is Lead-free

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.