FDMC86260 Series

N-Channel Power Trench® MOSFET 150V, 25A, 34mΩ

Catalog

N-Channel Power Trench® MOSFET 150V, 25A, 34mΩ

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type
ON Semiconductor FDMC86260	Surface Mount	34 mOhm	1330 pF	Power33	150 V	8-PowerWDFN	MOSFET (Metal Oxide)	20 V	5.4 A 16 A	4 V	-55 °C	150 °C	21 nC	2.3 W 54 W	6 V 10 V	N-Channel

Catalog

N-Channel Power Trench® MOSFET 150V, 25A, 34mΩ

Key Features

• Max rDS(on)= 34 mΩ at VGS= 10 V, ID= 5.4 A

• Max rDS(on)= 44 mΩ at VGS= 6 V, ID= 4.8 A

• High performance technology for extremely low rDS(on)

• 100% UIL Tested

• Termination is Lead-free

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.