FDMC86102LZ Series

N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ

Catalog

N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
ON Semiconductor FDMC86102LZ	24 mOhm	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	8-PowerWDFN	20 V	22 nC	2.3 W 41 W	2.2 V	N-Channel	7 A 18 A	4.5 V 10 V	8-MLP (3.3x3.3)	1290 pF	100 V
ON Semiconductor FDMC86102L	23 mOhm	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	8-PowerWDFN	20 V	22 nC	2.3 W 41 W		N-Channel	7 A 18 A	4.5 V 10 V	8-MLP (3.3x3.3)	1330 pF	100 V	3 V

Catalog

N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 24 mΩ at VGS= 10 V, ID= 6.5 A

• Max rDS(on)= 35 mΩ at VGS= 4.5 V, ID= 5.5 A

• HBM ESD protection level > 6 KV typical (Note 4)

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel logic Level MOSFETs are produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.