FDMC86324 Series

N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 53 A, 8.5 mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 53 A, 8.5 mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]
ON Semiconductor FDMC86248	6 V 10 V	Power33	8-PowerTDFN	MOSFET (Metal Oxide)	3.4 A	20 V	150 V	525 pF	Surface Mount	2.3 W 36 W	90 mOhm	N-Channel	4 V	-55 °C	150 °C	9 nC
ON Semiconductor FDMC86324	6 V 10 V	Power33	8-PowerTDFN	MOSFET (Metal Oxide)	7 A 20 A	20 V	80 V	965 pF	Surface Mount	2.3 W 41 W	23 mOhm	N-Channel	4 V	-55 °C	150 °C	18 nC
ON Semiconductor FDMC86012	2.5 V 4.5 V	Power33	8-PowerWDFN	MOSFET (Metal Oxide)	23 A	12 V	30 V	5075 pF	Surface Mount	2.3 W 54 W	2.7 mOhm	N-Channel	1.5 V	-55 °C	150 °C	38 nC
ON Semiconductor FDMC8651	2.5 V 4.5 V	Power33	8-PowerTDFN	MOSFET (Metal Oxide)	15 A 20 A	12 V	30 V		Surface Mount	2.3 W 41 W	6.1 mOhm	N-Channel	1.5 V	-55 °C	150 °C	27.2 nC
ON Semiconductor FDMC86184	6 V 10 V	8-PQFN (3.3x3.3)	8-PowerWDFN	MOSFET (Metal Oxide)	57 A	20 V	100 V	2090 pF	Surface Mount			N-Channel	4 V	-55 °C	150 °C		20 nC	8.5 mOhm	54 W

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 53 A, 8.5 mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 8.5 mΩ at VGS= 10 V, ID=21 A

• Max rDS(on)= 24.8 mΩ at VGS= 6 V, ID= 10 A

• 50% Lower Qrr than Other MOSFET Suppliers

• Lowers Switching Noise/EMI

• MSL1 Robust Package Design

• 100% UIL Tested

• RoHS Compliant

Description

This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on)has been maintained to provide a sub logic-level device.