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ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
FDB045AN08_F085N-Channel PowerTrench<sup>®</sup> MOSFET 75 V, 80 A, 3.9 mΩ | Discrete Semiconductor Products | 1 | Obsolete | N-Channel PowerTrench®MOSFET 75 V, 80 A, 3.9 mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. |
FDB050AN06A0N-Channel PowerTrench<sup>®</sup> MOSFET 60V, 80A, 5mΩ | Transistors | 1 | Active | N-Channel PowerTrench®MOSFET 60 V, 80 A, 5 mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. |
FDB0630N1507LN-Channel PowerTrench<sup>®</sup> MOSFET 150V, 130A, 6.4mΩ | Single FETs, MOSFETs | 1 | Active | This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications. |
FDB0690N1507LN-Channel PowerTrench<sup>®</sup> MOSFET 150V, 115A, 6.9mΩ | FETs, MOSFETs | 1 | Active | This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications. |
FDB075N15A_F085N-Channel Power Trench<sup>®</sup> MOSFET 150V, 110A, 5.5mΩ | Transistors | 3 | Obsolete | N-Channel Power Trench®MOSFET 150V, 110A, 5.5mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. |
FDB082N15AN-Channel PowerTrench<sup>®</sup> MOSFET 150V, 105A, 8.2mΩ | Transistors | 1 | Active | This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
FDB088N08N-Channel PowerTrench<sup>®</sup> MOSFET 75V, 85A, 8.8mΩ | Transistors | 1 | Active | This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
FDB120N10N-Channel PowerTrench<sup>®</sup> MOSFET 100V, 74A, 12mΩ | FETs, MOSFETs | 1 | Active | This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
FDB12N50TMPower MOSFET, N-Channel, UniFET<sup>TM</sup>, 500 V, 11.5 A, 650 mΩ, D2PAK | FETs, MOSFETs | 2 | Active | UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. |
FDB13AN06A0N-Channel PowerTrench<sup>®</sup> MOSFET, 60V, 62A, 13.5mΩ | Transistors | 1 | Active | N-Channel PowerTrench®MOSFET, 60V, 62A, 13.5mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. |