FDB13AN06A0 Series

N-Channel PowerTrench® MOSFET, 60V, 62A, 13.5mΩ

Catalog

N-Channel PowerTrench® MOSFET, 60V, 62A, 13.5mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Vgs (Max)
ON Semiconductor FDB13AN06A0	1350 pF	60 V	-55 °C	175 ░C	N-Channel	29 nC	6 V 10 V	MOSFET (Metal Oxide)	4 V	115 W	Surface Mount	10.9 A	62 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	20 V

Catalog

N-Channel PowerTrench® MOSFET, 60V, 62A, 13.5mΩ

Key Features

• RDS(ON)= 11.5mΩ (Typ.) @ VGS= 10V, ID= 62A

• QG(tot)= 22nC (Typ.) @ VGS= 10V

• Low Miller Charge

• Low QRRBody Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101Formerly developmental type 82555

Description

N-Channel PowerTrench®MOSFET, 60V, 62A, 13.5mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.