FDB050AN06A0 Series

N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ

Catalog

N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ

Part	Package / Case	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type
ON Semiconductor FDB050AN06A0	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	245 W	TO-263 (D2PAK)	18 A 80 A	3900 pF	5 mOhm	4 V	60 V	N-Channel	80 nC	MOSFET (Metal Oxide)	-55 °C	175 ░C	6 V 10 V	20 V	Surface Mount

Catalog

N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ

Key Features

• RDS(on)= 4.3mΩ (Typ.) @ VGS= 10V, ID= 80A

• QG(tot)= 61nC (Typ.) @ VGS= 10V

• Low Miller Charge

• Low QrrBody Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Description

N-Channel PowerTrench®MOSFET 60 V, 80 A, 5 mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.