FDB0690N1507L Series

N-Channel PowerTrench® MOSFET 150V, 115A, 6.9mΩ

Catalog

N-Channel PowerTrench® MOSFET 150V, 115A, 6.9mΩ

Part	Technology	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
ON Semiconductor FDB0690N1507L	MOSFET (Metal Oxide)	N-Channel	Surface Mount	115 nC	-55 °C	175 ░C	TO-263-7	D2PAK TO-263-7	3.8 A	20 V	4 V	10 V	6.9 mOhm	250 W	8775 pF	150 V

Catalog

N-Channel PowerTrench® MOSFET 150V, 115A, 6.9mΩ

Key Features

• Max rDS(on)= 6.9 mΩ at VGS= 10 V, ID= 17 A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.