FDB0630N1507L Series

N-Channel PowerTrench® MOSFET 150V, 130A, 6.4mΩ

Catalog

N-Channel PowerTrench® MOSFET 150V, 130A, 6.4mΩ

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDB0630N1507L	MOSFET (Metal Oxide)	130 A	20 V	3.8 W 300 W	6.4 mOhm	4 V	10 V	N-Channel	TO-263-7	9895 pF	D2PAK TO-263-7	Surface Mount	150 V	-55 °C	150 °C	135 nC

Catalog

N-Channel PowerTrench® MOSFET 150V, 130A, 6.4mΩ

Key Features

• MaxrDS(on)= 6.4 mΩ at VGS= 10 V, ID= 18 A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.