FDB082N15A Series

N-Channel PowerTrench® MOSFET 150V, 105A, 8.2mΩ

Catalog

N-Channel PowerTrench® MOSFET 150V, 105A, 8.2mΩ

Part	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDB082N15A	150 V	Surface Mount	MOSFET (Metal Oxide)	8.2 mOhm	294 W	117 A	6040 pF	20 V	N-Channel	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	84 nC	TO-263 (D2PAK)	-55 °C	175 ░C

Catalog

N-Channel PowerTrench® MOSFET 150V, 105A, 8.2mΩ

Key Features

• RDS(on)= 6.7mΩ ( Typ.)@ VGS= 10V, ID= 75A

• Fast Switching Speed

• Low Gate Charge, QG= 64.5nC ( Typ.)

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.