FDB045AN08_F085 Series

N-Channel PowerTrench® MOSFET 75 V, 80 A, 3.9 mΩ

Catalog

N-Channel PowerTrench® MOSFET 75 V, 80 A, 3.9 mΩ

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Grade	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Qualification	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
ON Semiconductor FDB045AN08A0-F085	MOSFET (Metal Oxide)	138 nC	19 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	4 V	-55 °C	175 ░C	75 V	20 V	Surface Mount	N-Channel	6 V 10 V	4.5 mOhm	AEC-Q101	TO-263 (D2PAK)	6600 pF	310 W

Catalog

N-Channel PowerTrench® MOSFET 75 V, 80 A, 3.9 mΩ

Key Features

• rDS(ON)= 3.9mΩ (Typ.), VGS= 10V, ID= 80A

• Qg(tot) = 92nC (Typ.), VGS= 10V

• Low Miller Charge

• Low QRRBody Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

• RoHS Compliant

Description

N-Channel PowerTrench®MOSFET 75 V, 80 A, 3.9 mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.