FDB075N15A_F085 Series

N-Channel Power Trench® MOSFET 150V, 110A, 5.5mΩ

Catalog

N-Channel Power Trench® MOSFET 150V, 110A, 5.5mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	FET Type	Vgs (Max)	Grade	Gate Charge (Qg) (Max) @ Vgs	Qualification
ON Semiconductor FDB075N15A-F085C
ON Semiconductor FDB075N15A_SN00284	-55 °C	175 ░C	4 V	150 V	7350 pF	MOSFET (Metal Oxide)	TO-263 (D2PAK)	10 V	130 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	7.5 mOhm	333 W	100 nC	Surface Mount	N-Channel	20 V
ON Semiconductor FDB075N15A-F085	-55 °C	175 ░C	4 V	150 V	5595 pF	MOSFET (Metal Oxide)	TO-263 (D2PAK)	10 V	110 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	7.5 mOhm	333 W		Surface Mount	N-Channel	20 V	Automotive	95 nC	AEC-Q101

Catalog

N-Channel Power Trench® MOSFET 150V, 110A, 5.5mΩ

Key Features

• Typ rDS(on)= 5.5mΩ at VGS= 10V, ID= 80A

• Typ Qg(tot)= 80nC at VGS= 10V, ID= 80A

• Qualified to AEC Q101

• UIS Capability

• RoHS Compliant

Description

N-Channel Power Trench®MOSFET 150V, 110A, 5.5mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.