FDB088N08 Series

N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ

Catalog

N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FDB088N08	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	75 V	118 nC	Surface Mount	20 V	MOSFET (Metal Oxide)	4 V	-55 °C	175 ░C	120 A	N-Channel	TO-263 (D2PAK)	8.8 mOhm	6595 pF

Catalog

N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ

Key Features

• RDS(on)= 7.3mΩ ( Typ.)@ VGS= 10V, ID= 85A

• Fast switching speed

• Low Gate Charge

• High performance trench technology for low RDS(on)

• High power and current handling capability

• RoHS compliant

Description

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.