FDB120N10 Series

N-Channel PowerTrench® MOSFET 100V, 74A, 12mΩ

Catalog

N-Channel PowerTrench® MOSFET 100V, 74A, 12mΩ

Part	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
ON Semiconductor FDB120N10	TO-263 (D2PAK)	20 V	5605 pF	4.5 V	12 mOhm	86 nC	Surface Mount	10 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	74 A	-55 °C	175 ░C	N-Channel	170 W	100 V

Catalog

N-Channel PowerTrench® MOSFET 100V, 74A, 12mΩ

Key Features

• RDS(on)= 9.7mΩ ( Typ.) @ VGS= 10V, ID= 74A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.