FDB12N50TM Series

Power MOSFET, N-Channel, UniFETTM, 500 V, 11.5 A, 650 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, UniFETTM, 500 V, 11.5 A, 650 mΩ, D2PAK

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
ON Semiconductor FDB12N50FTM-WS	700 mOhm	30 nC	11.5 A	MOSFET (Metal Oxide)	500 V	1395 pF	10 V	N-Channel	Surface Mount	165 W	TO-263 (D2PAK)	5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	150 °C	30 V
ON Semiconductor FDB12N50TM	650 mOhm	30 nC	11.5 A	MOSFET (Metal Oxide)	500 V	1315 pF	10 V	N-Channel	Surface Mount	165 W	TO-263 (D2PAK)	5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	150 °C	30 V

Catalog

Power MOSFET, N-Channel, UniFETTM, 500 V, 11.5 A, 650 mΩ, D2PAK

Key Features

• RDS(on)= 550mΩ ( Typ.)@ VGS= 10V, ID= 6A

• Low gate charge ( Typ. 22nC)

• Low Crss( Typ. 11pF)

• 100% avalanche tested

• RoHS compliant

Description

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.