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Goford Semiconductor is a fabless power semiconductor company founded in 1995, specializing in power MOSFETs, IGBTs, and wide bandgap devices for automotive, industrial, and consumer electronics applications.
Parts that are not part of a series
Company background and product focus
Goford Semiconductor, founded in 1995, is a fabless semiconductor company devoted to the R&D and sales of power MOSFET products. With global offices in the USA, Australia, Shenzhen, Jiangsu, and Hong Kong, Goford delivers cost-effective power solutions focused on energy efficiency, mobility, and reliability.
The company offers a comprehensive range of power MOSFETs, IGBTs, and emerging SiC/GaN wide bandgap devices. Goford serves diverse industries including automotive, portable devices, LED lighting, solar power, battery management, and motor control applications.
Key applications include:
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Product families from Goford Semiconductor
| Series | Category | Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | Parts | Status | Description |
|---|---|---|---|---|
| FET, MOSFET Arrays | 2 | Active | ||
| Discrete Semiconductor Products | 1 | Active | ||
| Discrete Semiconductor Products | 1 | Active | ||
| Discrete Semiconductor Products | 1 | Active | ||
| Discrete Semiconductor Products | 1 | Active | ||
| Discrete Semiconductor Products | 1 | Active | ||
| Discrete Semiconductor Products | 1 | Active | ||
| Transistors | 1 | Active |
Parts from Goford Semiconductor that are not part of a series
| Part Information | Pricing (lowest) | Gate Charge (Max) | FET Type | Rds On (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Package / Case | Technology | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Current - Continuous Drain (Id) (Tc) | Package Name | Vgs (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Goford Semiconductor N60V,RD(MAX)<100M@10V,RD(MAX)<12 | Sign in to see pricing | 14.6 nC | N-Channel | 80 mOhm, 100 mOhm | 10 V | 4.5 V | 1.2 V | SC-59, SOT-23-3, TO-236-3 | MOSFET (Metal Oxide) | 60 V | 458 pF, 458 pF | Surface Mount | -55 °C | 150 °C | 3 A | SOT-23-3 | 20 V | 1.7 W | — | — |
Goford Semiconductor N60V,RD(MAX)<100M@10V,RD(MAX)<12 | Sign in to see pricing | 14.6 nC | N-Channel | 80 mOhm, 100 mOhm | 10 V | 4.5 V | 1.2 V | SC-59, SOT-23-3, TO-236-3 | MOSFET (Metal Oxide) | 60 V | 458 pF, 458 pF | Surface Mount | -55 °C | 150 °C | 3 A | SOT-23-3 | 20 V | 1.7 W | — | — |
 Goford Semiconductor N60V,RD(MAX)<42M@10V,RD(MAX)<46M | Sign in to see pricing | 8.9 nC | N-Channel | 42 mOhm, 45 mOhm | 10 V | 4.5 V | 2.5 V | SC-59, SOT-23-3, TO-236-3 | MOSFET (Metal Oxide) | 60 V | 765 pF, 765 pF | Surface Mount | -55 °C | 150 °C | — | SOT-23-3 | 20 V | 960 mW, 960 mW | 5.5 A | — |
 Goford Semiconductor N100V,RD(MAX)<53M@10V,RD(MAX)<63 | Sign in to see pricing | 26 nC | N-Channel | 53 mOhm | 10 V | 4.5 V | 2.5 V, 3 V | DPAK (2 Leads + Tab), SC-63, TO-252-3 | MOSFET (Metal Oxide) | 100 V | 2161 pF | Surface Mount | -55 °C | 150 °C | 25 A, 25 A, 35 A | TO-252 | 20 V | 62.5 W, 80 W | — | — |
 Goford Semiconductor N 200V, RD(MAX)<0.16@10V,VTH1.0V | Sign in to see pricing | 18 nC | N-Channel | 190 mOhm | — | — | 3 V | DPAK (2 Leads + Tab), SC-63, TO-252-3 | MOSFET (Metal Oxide) | 200 V | 847 pF | Surface Mount | -55 °C | 150 °C | 18 A | TO-252 | 20 V, 30 V | 65.8 W | — | 10 V |
 Goford Semiconductor MOSFET N-CH 200V 18A TO-220F | Sign in to see pricing | 18 nC | N-Channel | 190 mOhm | — | — | 3 V | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 200 V | 852 pF | Through Hole | -55 °C | 150 °C | 18 A | TO-220F | 20 V | 35 W, 110 W | — | 10 V |
 Goford Semiconductor N200V, 18A,RD<0.16@10V,VTH1V~3V, | Sign in to see pricing | 17.7 nC | N-Channel | 160 mOhm | — | — | 3 V | IPAK, TO-251-3 Short Leads, TO-251AA | MOSFET (Metal Oxide) | 200 V | 836 pF | Through Hole | -55 °C | 150 °C | 18 A | TO-251 | 30 V | 65.8 W | — | 10 V |
 Goford Semiconductor MOSFET N-CH 20V 6A SOT-23 | Sign in to see pricing | 11.6 nC | N-Channel | 27 mOhm | 4.5 V | 2.5 V | 900 mV | SC-59, SOT-23-3, TO-236-3 | MOSFET (Metal Oxide) | 20 V | 363 pF | Surface Mount | -55 °C | 150 °C | 4.5 A, 6 A | SOT-23-3 | 12 V | 1 W, 1.25 W | — | — |
Goford Semiconductor MOSFET P-CH 20V 3A SOT-23 | Sign in to see pricing | 8.5 nC | P-Channel | 56 mOhm | 4.5 V | 2.5 V | 900 mV | SC-59, SOT-23-3, TO-236-3 | MOSFET (Metal Oxide) | 20 V | 640 pF | Surface Mount | -55 °C | 150 °C | 3 A | SOT-23-3 | 10 V, 12 V | 1 W | — | — |
Goford Semiconductor MOSFET P-CH 30V 2.8A SOT-23 | Sign in to see pricing | 4.5 nC | P-Channel | 75 mOhm | 10 V | 4.5 V | 2.4 V | SC-59, SOT-23-3, TO-236-3 | MOSFET (Metal Oxide) | 30 V | 366 pF | Surface Mount | -55 °C | 150 °C | 2.8 A | SOT-23-3 | 20 V | 890 mW | — | — |