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Discrete Semiconductor Products

2301

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Goford Semiconductor

MOSFET P-CH 20V 3A SOT-23

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2302
Discrete Semiconductor Products

2301

Active
Goford Semiconductor

MOSFET P-CH 20V 3A SOT-23

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2301
Current - Continuous Drain (Id) (Tc)3 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)8.5 nC
Input Capacitance (Ciss) (Max)640 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3
Power Dissipation (Max)1 W
Rds On (Max)56 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V, 12 V
Vgs(th) (Max)900 mV

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Description

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2301

P-Channel 3A (Tc) 1W (Tc) Surface Mount SOT-23-3

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