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18N10
Discrete Semiconductor Products

18N10

Active
Goford Semiconductor

N100V,RD(MAX)<53M@10V,RD(MAX)<63

18N10
Discrete Semiconductor Products

18N10

Active
Goford Semiconductor

N100V,RD(MAX)<53M@10V,RD(MAX)<63

Technical Specifications

Parameters and characteristics for this part

Specification18N10
Current - Continuous Drain (Id) (Tc)35 A, 25 A, 25 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)26 nC
Input Capacitance (Ciss) (Max)2161 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252
Power Dissipation (Max)62.5 W, 80 W
Rds On (Max)53 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V, 3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Reel (TR) 2500$ 0.19<4d
15000$ 0.18
30000$ 0.16

CAD

3D models and CAD resources for this part

Description

General part information

18N10

N-Channel 100 V 35A (Tc) 80W (Tc) Surface Mount TO-252

Documents

Technical documentation and resources