Discrete Semiconductor Products

18N10

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N100V,RD(MAX)<53M@10V,RD(MAX)<63

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Discrete Semiconductor Products

Active

N100V,RD(MAX)<53M@10V,RD(MAX)<63

Technical Specifications

Parameters and characteristics for this part

Specification	18N10

Current - Continuous Drain (Id) (Tc)	25 A, 25 A, 35 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	26 nC
Input Capacitance (Ciss) (Max)	2161 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252
Power Dissipation (Max)	80 W, 62.5 W
Rds On (Max)	53 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V, 2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

N-Channel 100 V 35A (Tc) 80W (Tc) Surface Mount TO-252

Technical documentation and resources