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06N06L
Discrete Semiconductor Products

06N06L

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Goford Semiconductor

N60V,RD(MAX)<42M@10V,RD(MAX)<46M

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06N06L
Discrete Semiconductor Products

06N06L

Active
Goford Semiconductor

N60V,RD(MAX)<42M@10V,RD(MAX)<46M

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification06N06L
Current - Continuous Drain (Id)5.5 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)8.9 nC
Input Capacitance (Ciss) (Max)765 pF, 765 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3
Power Dissipation (Max)960 mW, 960 mW
Rds On (Max)42 mOhm, 45 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 2079$ 0.521m+
30000$ 0.06

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06N06L

N60V,RD(MAX)<42M@10V,RD(MAX)<46M

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