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18N20F
Discrete Semiconductor Products

18N20F

Active
Goford Semiconductor

MOSFET N-CH 200V 18A TO-220F

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18N20F
Discrete Semiconductor Products

18N20F

Active
Goford Semiconductor

MOSFET N-CH 200V 18A TO-220F

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification18N20F
Current - Continuous Drain (Id) (Tc)18 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)18 nC
Input Capacitance (Ciss) (Max)852 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220F
Power Dissipation (Max)110 W, 35 W
Rds On (Max)190 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 72$ 1.751m+
2000$ 0.44

CAD

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Description

General part information

18N20F

MOSFET N-CH 200V 18A TO-220F

Documents

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