Discrete Semiconductor Products

03N06L

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N60V,RD(MAX)<100M@10V,RD(MAX)<12

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Discrete Semiconductor Products

Active

N60V,RD(MAX)<100M@10V,RD(MAX)<12

Technical Specifications

Parameters and characteristics for this part

Specification	03N06L

Current - Continuous Drain (Id) (Tc)	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	14.6 nC
Input Capacitance (Ciss) (Max)	458 pF, 458 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3
Power Dissipation (Max)	1.7 W
Rds On (Max)	80 mOhm, 100 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1.2 V

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General part information

N60V,RD(MAX)<100M@10V,RD(MAX)<12

Technical documentation and resources