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03N06
Discrete Semiconductor Products

03N06

Active
Goford Semiconductor

N60V,RD(MAX)<100M@10V,RD(MAX)<12

03N06
Discrete Semiconductor Products

03N06

Active
Goford Semiconductor

N60V,RD(MAX)<100M@10V,RD(MAX)<12

Technical Specifications

Parameters and characteristics for this part

Specification03N06
Current - Continuous Drain (Id) (Tc)3 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)14.6 nC
Input Capacitance (Ciss) (Max)458 pF, 458 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3
Power Dissipation (Max)1.7 W
Rds On (Max)100 mOhm, 80 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Reel (TR) 3000$ 0.05<4d
15000$ 0.04
30000$ 0.04

CAD

3D models and CAD resources for this part

Description

General part information

03N06

N60V,RD(MAX)<100M@10V,RD(MAX)<12

Documents

Technical documentation and resources