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18N20J
Discrete Semiconductor Products

18N20J

Active
Goford Semiconductor

N200V, 18A,RD<0.16@10V,VTH1V~3V,

18N20J
Discrete Semiconductor Products

18N20J

Active
Goford Semiconductor

N200V, 18A,RD<0.16@10V,VTH1V~3V,

Technical Specifications

Parameters and characteristics for this part

Specification18N20J
Current - Continuous Drain (Id) (Tc)18 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)17.7 nC
Input Capacitance (Ciss) (Max)836 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Package NameTO-251
Power Dissipation (Max)65.8 W
Rds On (Max)160 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 3000$ 0.37<4d
15000$ 0.34
30000$ 0.31

CAD

3D models and CAD resources for this part

Description

General part information

18N20J

N-Channel 200 V 18A (Tc) 65.8W (Tc) Through Hole TO-251

Documents

Technical documentation and resources