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2301H
Discrete Semiconductor Products

2301H

Active
Goford Semiconductor

MOSFET P-CH 30V 2.8A SOT-23

2301H
Discrete Semiconductor Products

2301H

Active
Goford Semiconductor

MOSFET P-CH 30V 2.8A SOT-23

Technical Specifications

Parameters and characteristics for this part

Specification2301H
Current - Continuous Drain (Id) (Tc)2.8 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)4.5 nC
Input Capacitance (Ciss) (Max)366 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3
Power Dissipation (Max)890 mW
Rds On (Max)75 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Reel (TR) 3000$ 0.03<4d
15000$ 0.03
30000$ 0.03

CAD

3D models and CAD resources for this part

Description

General part information

2301H

P-Channel 2.8A (Tc) 890mW (Tc) Surface Mount SOT-23-3